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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 期刊論文 >  Comparison of DC and high-frequency performance of zinc-doped andcarbon-doped InP/InGaAs HBTs grown by metalorganic chemical vapordeposition


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/12056


    Title: Comparison of DC and high-frequency performance of zinc-doped andcarbon-doped InP/InGaAs HBTs grown by metalorganic chemical vapordeposition
    Authors: Delong Cui
    Pavlidis, D.
    Hsu, S.S.H.
    Eisenbach, A.
    Date: 2002
    Publisher: Institute of Electrical and Electronics Engineers Inc.
    Keywords: III-V semiconductors
    MOCVD coatings
    carbon
    carrier lifetime
    contact resistance
    Abstract: Zinc and carbon-doped InP/InGaAs heterojunction bipolar transistors (HBTs) with the same design were grown by metalorganic chemical vapor deposition (MOCVD). DC current gain values of 36 and 16 were measured for zinc and carbon-doped HBTs, respectively, and carrier lifetimes were measured by time-resolved photoluminescence to explain the difference. Transmission line model (TLM) analysis of carbon-doped base layers showed excellent sheet-resistance (828 Ω/□ for 600 A base), indicating successful growth of highly carbon-doped base (2×1019 cm-3). The reasons for larger contact resistance of carbon than zinc-doped base despite its low sheet resistance were analyzed. fT and fmax of 72 and 109 GHz were measured for zinc-doped HBTs, while 70-GHz fT and 102 GHz fmax were measured for carbon-doped devices. While the best performance was similar for the two HBTs, the associated biasing current densities were much different between zinc (4.0×10 4 A/cm2) and carbon-doped HBTs (2.0×105 A/cm2). The bias-dependant high-frequency performance of the HBTs was measured and analyzed to explain the discrepancy
    Relation Link: http://www.ieee.org/portal/site
    URI: http://nthur.lib.nthu.edu.tw/handle/987654321/12056
    Appears in Collections:[電機工程學系] 期刊論文
    [電子工程研究所] 期刊論文

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