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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 期刊論文 >  A comparison of low-frequency noise characteristics and noise sources in NPN and PNP InP-based heterojunction bipolar transistors


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/12058


    Title: A comparison of low-frequency noise characteristics and noise sources in NPN and PNP InP-based heterojunction bipolar transistors
    Authors: Hsu, S.S.H.
    Pavlidis, D.
    Date: 2003
    Publisher: Institute of Electrical and Electronics Engineers Inc.
    Keywords: III-V semiconductors
    electron-hole recombination
    equivalent circuits
    heterojunction bipolar transistors
    indium compounds
    Abstract: Low-frequency noise characteristics of NPN and PNP InP-based heterojunction bipolar transistors (HBTs) were investigated. NPN HBTs showed a lower base noise current level (3.85 /spl times/ 10/sup -17/ A/sup 2//Hz) than PNP HBTs (3.10 /spl times/ 10/sup -16/ A/sup 2//Hz), but higher collector noise current level (7.16 /spl times/ 10/sup -16/ A/sup 2//Hz) than PNP HBTs (1.48 /spl times/ 10/sup -16/ A/sup 2//Hz) at 10 Hz under I/sub C/=1 mA, V/sub C/=1 V. The NPN devices showed a weak dependence I/sub C//sup 0.77/ of the collector noise current, and a dependence I/sub B//sup 1.18/ of the base noise current, while the PNP devices showed dependences I/sub C//sup 1.92/ and I/sub B//sup 1.54/, respectively. The dominant noise sources and relative intrinsic noise strength were found in both NPN and PNP InP-based HBTs by comparing the noise spectral density with and without the emitter feedback resistor. Equivalent circuit models were employed and intrinsic noise sources were extracted. The high base noise current of PNP HBTs could be attributed to the exposed emitter periphery and higher electron surface recombination velocity in P-type InP materials, while the relatively high collector noise current of NPN HBTs may be due to the noise source originating from generation-recombination process in the bulk material between the emitter and the collector.
    Relation Link: http://www.ieee.org/portal/site
    URI: http://nthur.lib.nthu.edu.tw/handle/987654321/12058
    Appears in Collections:[電機工程學系] 期刊論文
    [電子工程研究所] 期刊論文

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