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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 期刊論文 >  The electrical characteristics of metal-ferroelectric (PbZrxTi1-xO3)-insulator(Ta2O5)-silicon structure for non-volatile memory applications


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/12117


    Title: The electrical characteristics of metal-ferroelectric (PbZrxTi1-xO3)-insulator(Ta2O5)-silicon structure for non-volatile memory applications
    Authors: Chi-Yuan Sze
    Lee, J.Y.
    Date: 2000
    Publisher: Institute of Electrical and Electronics Engineers Inc.
    Keywords: MIS devices
    elemental semiconductors
    ferroelectric capacitors
    ferroelectric devices
    ferroelectric materials
    Abstract: A metal ferroelectric insulator-silicon (MFIS) structure using lead-zirconate-titanate (PZT) as the ferroelectric layer and Ta2O5 as the insulator layer is fabricated. This structure is studied for the potential application of nonvolatile memory devices. High frequency C-V measurements show a flat band voltage shift of 13 V under a ?5 V writing pulse. The interface-trap density Dit is measured by the conductance method. The MFIS capacitors are shown to have a fatigue lifetime of 1?011 cycles and 5?07 cycles for 11.4 V and 15 V writing pulses, respectively
    Relation Link: http://www.ieee.org/portal/site
    URI: http://nthur.lib.nthu.edu.tw/handle/987654321/12117
    Appears in Collections:[電機工程學系] 期刊論文
    [電子工程研究所] 期刊論文

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