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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 期刊論文 >  The charge trapping effect of metal-ferroelectric (PbZr0.53Ti0.47O3)-insulator (HfO2)-silicon capacitors


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/12123


    Title: The charge trapping effect of metal-ferroelectric (PbZr0.53Ti0.47O3)-insulator (HfO2)-silicon capacitors
    Authors: Pi-chun Juan
    Yu-ping Hu
    Fu-chien Chiu
    Lee, J.Y.
    Date: 2005
    Publisher: American Institute of Physics
    Keywords: band structure
    charge injection
    current density
    elemental semiconductors
    ferroelectric capacitors
    Abstract: Metal-ferroelectric-insulator-semiconductor (MFIS) capacitors with a Pb(Zr0.53,Ti0.47)O3 ferroelectric layer and a hafnium oxide insulator layer have been fabricated and characterized. The size of the capacitance-voltage memory windows was investigated. The memory window first increases to a saturated value of 0.7 V with the sweep voltage and then decreases due to charge injection. The oxide trapped charges in the ferroelectric/insulator layers are studied by a voltage stress method. The flatband voltage (VFB) is measured before and after the voltage stress. The ΔVFB is 0.59 V at a negative stress voltage pulse of -5 V for 30 s. The ΔVFB under positive voltage stress was much less and was 0.06 V at a stress voltage of +5 V for 5 min. The energy-band diagram of the MFIS structure at inversion and accumulation modes are plotted and the VFB shift can be explained by the trapping or detrapping of charges. The current-density versus stress time (J-t) characteristics were also measured. The result is consistent with the charge trapping model
    Relation Link: http://www.aip.org/
    URI: http://nthur.lib.nthu.edu.tw/handle/987654321/12123
    Appears in Collections:[電機工程學系] 期刊論文
    [電子工程研究所] 期刊論文

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