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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 期刊論文 >  Atomic-layer epitaxy by a flux-interruption and annealing method and the analysis of reflection high-energy electron diffraction oscillation overshoot in the molecular-beam epitaxy growth of GaAs


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/12137


    Title: Atomic-layer epitaxy by a flux-interruption and annealing method and the analysis of reflection high-energy electron diffraction oscillation overshoot in the molecular-beam epitaxy growth of GaAs
    Authors: Kun-Jing Lee
    Joseph Ya-Min Lee
    Yu-Jeng Chang
    Date: 1993
    Publisher: American Institute of Physics
    Keywords: annealing
    atomic layer epitaxial growth
    gallium arsenide
    III-V semiconductors
    molecular beam epitaxial growth
    reflection high energy electron diffraction
    Abstract: Atomic-layer epitaxy is relatively rare in molecular-beam epitaxy (MBE). This is because the precise control of atomic layer deposition is difficult. Shutter mechanical delay and signal transit delay times are main reasons for the difficulty of precise control. A flux-interruption and annealing method has been used to grow atomic-layer epitaxy by MBE. Exact shutter action has been achieved to avoid an excess fractional layer and keep the reflection high-energy electron diffraction (RHEED) oscillation indefinitely. The RHEED oscillation profile, including the overshoot, has been studied as a function of substrate temperature and excess deposition of As4
    Relation Link: http://www.aip.org/
    URI: http://nthur.lib.nthu.edu.tw/handle/987654321/12137
    Appears in Collections:[電機工程學系] 期刊論文
    [電子工程研究所] 期刊論文

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