English  |  正體中文  |  简体中文  |  Items with full text/Total items : 54367/62174 (87%)
Visitors : 14415077      Online Users : 32
RC Version 6.0 © Powered By DSPACE, MIT. Enhanced by NTHU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version
    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 期刊論文 >  Electrical characterization of tunnel insulator in metal/insulator tunnel transistors fabricated by atomic force microscope


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/12153


    Title: Electrical characterization of tunnel insulator in metal/insulator tunnel transistors fabricated by atomic force microscope
    Authors: Fu-Chien Chiu
    Shih-Kai Fan
    Kwang-Cheng Tai
    Ya-min Lee, J.
    Ya-Chang Chou
    Date: 2005
    Publisher: American Institute of Physics
    Keywords: anodisation
    atomic force microscopy
    effective mass
    electrical conductivity
    Schottky barriers
    Abstract: Metal-insulator-tunnel-transistors (MITTs) that operate by varying the gate voltage to control the current flow through a tunnel insulator were fabricated. In this work, the local Ti/TiOx/Ti tunnel junctions were formed by tip-induced anodic oxidation using conducting-tip atomic force microscope. Experimental results show that the dominant conduction mechanism of the Ti/TiOx/Ti structure at 300 K is Schottky emission at low electric field and Fowler-Nordheim tunneling at high electric field, respectively. The Ti/TiOx barrier height and the electron effective mass in TiOx are evaluated using both the intercept of Schottky plot and the slope of Fowler-Nordheim plot. The electron effective mass in TiOx and the extracted Ti/TiOx barrier height were determined to be 0.48 m0 and 95 meV, respectively. The Ids-Vds characteristics show that the MITTs with 58.5 nm channel length can operate with a current on/off ratio of about 107
    Relation Link: http://www.aip.org/
    URI: http://nthur.lib.nthu.edu.tw/handle/987654321/12153
    Appears in Collections:[電機工程學系] 期刊論文
    [電子工程研究所] 期刊論文

    Files in This Item:

    File Description SizeFormat
    2030179010066.pdf443KbAdobe PDF804View/Open


    在NTHUR中所有的資料項目都受到原著作權保護,僅提供學術研究及教育使用,敬請尊重著作權人之權益。若須利用於商業或營利,請先取得著作權人授權。
    若發現本網站收錄之內容有侵害著作權人權益之情事,請權利人通知本網站管理者(smluo@lib.nthu.edu.tw),管理者將立即採取移除該內容等補救措施。

    SFX Query

    與系統管理員聯絡

    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback