National Tsing Hua University Institutional Repository:Electrical characterization of tunnel insulator in metal/insulator tunnel transistors fabricated by atomic force microscope
English  |  正體中文  |  简体中文  |  全文笔数/总笔数 : 54367/62174 (87%)
造访人次 : 14501418      在线人数 : 86
RC Version 6.0 © Powered By DSPACE, MIT. Enhanced by NTHU Library IR team.
搜寻范围 查询小技巧:
  • 您可在西文检索词汇前后加上"双引号",以获取较精准的检索结果
  • 若欲以作者姓名搜寻,建议至进阶搜寻限定作者字段,可获得较完整数据
  • 进阶搜寻
    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 期刊論文 >  Electrical characterization of tunnel insulator in metal/insulator tunnel transistors fabricated by atomic force microscope


    jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/12153


    题名: Electrical characterization of tunnel insulator in metal/insulator tunnel transistors fabricated by atomic force microscope
    作者: Fu-Chien Chiu
    Shih-Kai Fan
    Kwang-Cheng Tai
    Ya-min Lee, J.
    Ya-Chang Chou
    日期: 2005
    出版者: American Institute of Physics
    关键词: anodisation
    atomic force microscopy
    effective mass
    electrical conductivity
    Schottky barriers
    摘要: Metal-insulator-tunnel-transistors (MITTs) that operate by varying the gate voltage to control the current flow through a tunnel insulator were fabricated. In this work, the local Ti/TiOx/Ti tunnel junctions were formed by tip-induced anodic oxidation using conducting-tip atomic force microscope. Experimental results show that the dominant conduction mechanism of the Ti/TiOx/Ti structure at 300 K is Schottky emission at low electric field and Fowler-Nordheim tunneling at high electric field, respectively. The Ti/TiOx barrier height and the electron effective mass in TiOx are evaluated using both the intercept of Schottky plot and the slope of Fowler-Nordheim plot. The electron effective mass in TiOx and the extracted Ti/TiOx barrier height were determined to be 0.48 m0 and 95 meV, respectively. The Ids-Vds characteristics show that the MITTs with 58.5 nm channel length can operate with a current on/off ratio of about 107
    相関连結: http://www.aip.org/
    URI: http://nthur.lib.nthu.edu.tw/handle/987654321/12153
    显示于类别:[電機工程學系] 期刊論文
    [電子工程研究所] 期刊論文

    文件中的档案:

    档案 描述 大小格式浏览次数
    2030179010066.pdf443KbAdobe PDF814检视/开启


    在NTHUR中所有的資料項目都受到原著作權保護,僅提供學術研究及教育使用,敬請尊重著作權人之權益。若須利用於商業或營利,請先取得著作權人授權。
    若發現本網站收錄之內容有侵害著作權人權益之情事,請權利人通知本網站管理者(smluo@lib.nthu.edu.tw),管理者將立即採取移除該內容等補救措施。

    SFX Query

    與系統管理員聯絡

    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 回馈