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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 期刊論文 >  Capacitance-voltage spectroscopy of silicon nanodots


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/12211


    Title: Capacitance-voltage spectroscopy of silicon nanodots
    Authors: Su, Alex Yu-Kwen
    Hwang, H.L.
    Pilkuhn, M.H.
    Pei, Z.
    教師: 黃惠良
    Date: 2005
    Publisher: American Institute of Physics Inc.
    Relation: Applied Physics Letters, Volume 86, Issue 6, on 3 Feb. 2005
    Keywords: Capacitance
    Electric potential
    Spectroscopy
    Silicon
    Nanostructured materials
    Abstract: Frequency-dependent capacitance-voltage spectroscopy was applied to investigate the carrier transport dynamics in a silicon nanodots resonant tunneling device structure. Two negative differential resistance (NDR) regions in the current-voltage characteristics were found in this investigated structure. Two anomalous regions were also found in the capacitance-voltage spectroscopy, which coincide with the NDR regions in the current-voltage characteristics. The origin of the anomalous phenomenon was attributed to the mesoscopic quantum capacitance due to the holes transport through the energy states associated with the Si nanodots. An equivalent circuit model was proposed to quantitatively evaluate the frequency dependence of the capacitance-voltage spectroscopy.
    Relation Link: http://www.aip.org/
    URI: http://nthur.lib.nthu.edu.tw/handle/987654321/12211
    Appears in Collections:[電機工程學系] 期刊論文
    [電子工程研究所] 期刊論文

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