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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 期刊論文 >  Efficient low-temperature data retention lifetime prediction for split-gate flash memories using a voltage acceleration methodology


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/12570


    Title: Efficient low-temperature data retention lifetime prediction for split-gate flash memories using a voltage acceleration methodology
    Authors: Hu,Ling-Chang
    Kang,An-Chi
    Wu,Tai-Yi
    Shih,J. R.
    Lin,Yao-Feng
    Wu,Kenneth
    King,Ya-Chin
    Date: 2006
    Publisher: Institute of Electrical and Electronics Engineers Inc.
    Keywords: Flash memory
    Statistical tests
    Voltage control
    Acceleration
    Reliability
    Abstract: In developing a fast statistical testing methodology to predict the postcycling low-temperature data-retention lifetime of split-gate Flash memories, word-line stress is used to accelerate the charge-gain effect responsible for bit-cell-current reduction among the tail-bits. To find out the voltage dependence on data-retention lifetime, various word-line stress voltages are performed to enhance the charge-gain effect of the erase-state cells. At an accelerated state, word-line stress lifetime tests can be completed within a much shorter test period and still provide accurate lifetime prediction for embedded Flash-memory products. © 2006 IEEE.
    Relation Link: http://www.ieee.org/portal/site
    URI: http://nthur.lib.nthu.edu.tw/handle/987654321/12570
    Appears in Collections:[電機工程學系] 期刊論文
    [電子工程研究所] 期刊論文

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