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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 期刊論文 >  Charge-based capacitance measurement for bias-dependent capacitance


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/12571


    Title: Charge-based capacitance measurement for bias-dependent capacitance
    Authors: Chang, Yao-Wen
    Chang, Hsing-Wen
    Lu, Tao-Cheng
    King, Ya-Chin
    Ting, Wenchi
    Ku, Yen-Hui Joseph
    Lu, Chih-Yuan
    Date: 2006
    Publisher: Institute of Electrical and Electronics Engineers Inc.
    Keywords: Capacitance measurement
    Charge carriers
    CMOS integrated circuits
    Gates
    MOSFET devices
    Abstract: In this letter, charge-based capacitance measurement (CBCM) is applied to characterize bias-dependent capacitances in a CMOS transistor. Due to its special advantage of being free from the errors induced by charge injection, the operation of charge-injection-induced-error-free CBCM allows for the extraction of full-range gate capacitance from the accumulation region to the inversion region and the overlap capacitance of MOSFET devices with submicrometer dimensions.
    Relation Link: http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=1626466
    http://www.ieee.org/portal/site
    URI: http://nthur.lib.nthu.edu.tw/handle/987654321/12571
    Appears in Collections:[電機工程學系] 期刊論文
    [電子工程研究所] 期刊論文

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