English  |  正體中文  |  简体中文  |  Items with full text/Total items : 54367/62174 (87%)
Visitors : 13573900      Online Users : 16
RC Version 6.0 © Powered By DSPACE, MIT. Enhanced by NTHU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version
    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機資訊學院學士班 > 期刊論文 >  1.3 μm compressive-strain GaInAsP/GaInAsP multiple-quantum-well laser diodes with a tensile-strain GaInP electron stopper layer


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/41882


    Title: 1.3 μm compressive-strain GaInAsP/GaInAsP multiple-quantum-well laser diodes with a tensile-strain GaInP electron stopper layer
    Authors: Wu,Ming-Yuan;Tsai,Chia-Lung;Wu,Meng-Chyi;Lei,Po-Hsun;Ho,Chong-Long;Ho,Wen-Jeng
    教師: 吳孟奇
    Date: 2004
    Publisher: Elsevier
    Relation: SOLID-STATE ELECTRONICS,Volume 48,  Issue 9,Pages 1651-1654,SEP 2004
    Keywords: Quantum well lasers
    Semiconducting gallium compounds
    Tensile strength
    Compressive strength
    Metallorganic chemical vapor deposition
    Abstract: © 2004 Elsevier - 1.3 μm compressive-strain multiple-quantum-well (CS-MQW) GaInAsP/GaInAsP laser diodes (LDs) with a tensile-strain GaInP electron stopper layer (TS-ESL) were grown by metalorganic chemical vapor deposition (MOCVD). The TS-ESL, which is inserted between the MQW region and p-side separate-confinement- heterostructure (SCH) layer, is used to suppress the electron overflow from MQW region to p-side SCH layer and to compensate the strain resulted from the CS-MQW region. The fabricated 3.5-μm-ridge-width LDs with a GaInP ESL exhibit a lower threshold current density of 0.88 kA/cm2, a higher differential quantum efficiency of 48%, a comparable characteristic temperature of 57 K, a maximum operating temperature up to 85 °C, and a red-shift rate of 0.28 nm/°C, as compared to those without a GaInP ESL.
    URI: http://www.elsevier.com/
    http://nthur.lib.nthu.edu.tw/handle/987654321/41882
    Appears in Collections:[電機資訊學院學士班] 期刊論文

    Files in This Item:

    File SizeFormat
    0KbUnknown1564View/Open


    在NTHUR中所有的資料項目都受到原著作權保護,僅提供學術研究及教育使用,敬請尊重著作權人之權益。若須利用於商業或營利,請先取得著作權人授權。
    若發現本網站收錄之內容有侵害著作權人權益之情事,請權利人通知本網站管理者(smluo@lib.nthu.edu.tw),管理者將立即採取移除該內容等補救措施。

    SFX Query

    與系統管理員聯絡

    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback