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    National Tsing Hua University Institutional Repository > 工學院  > 工業工程與工程管理學系 > 期刊論文 >  ANNEALING BEHAVIOR OF LOW-ENERGY, HIGH-DOSE BF2+ IMPLANTED (001)SI


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/46884


    Title: ANNEALING BEHAVIOR OF LOW-ENERGY, HIGH-DOSE BF2+ IMPLANTED (001)SI
    Authors: CHU, CH;CHEN, LJ
    教師: 瞿志行
    Date: 1991
    Publisher: Elsevier
    Relation: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, Volumes 59-60, Part 1, 1 July 1991, Pages 391-394
    Keywords: TRANSMISSION ELECTRON-MICROSCOPE
    BF2+-IMPLANTED SILICON
    RESIDUAL DEFECTS
    GROWTH
    Abstract: The annealing behavior of microstructural defects in 20 keV, 1 x 10(16)/cm2 BF2+ implanted (001)Si has been investigated by cross-sectional transmission electron microscopy. The solid phase epitaxial growth was not completed in samples annealed at 600-degrees-C for 0.5 h. Fluorine bubbles were observed to form near the surface. Dislocation loops were observed to distribute near the original a/c interfaces in 700-900-degrees-C annealed samples. After 1000-degrees-C annealing for 30 min, fluorine bubbles were the only defects detected. In 1100-degrees-C annealed samples, the truncation of large bubbles with the surface resulted in a rough surface morphology. The relationships between annealing behavior of residual defects and implantation conditions are discussed. Removal of the dislocations near the a/c interface at 1000-degrees-C is attributed to the presence of a relatively low concentration of excess interstitials beneath the a/c interface as a result of low energy implant.
    URI: http://www.elsevier.com/
    http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/46884
    Appears in Collections:[工業工程與工程管理學系] 期刊論文

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