The annealing behavior of microstructural defects in 20 keV, 1 x 10(16)/cm2 BF2+ implanted (001)Si has been investigated by cross-sectional transmission electron microscopy. The solid phase epitaxial growth was not completed in samples annealed at 600-degrees-C for 0.5 h. Fluorine bubbles were observed to form near the surface. Dislocation loops were observed to distribute near the original a/c interfaces in 700-900-degrees-C annealed samples. After 1000-degrees-C annealing for 30 min, fluorine bubbles were the only defects detected. In 1100-degrees-C annealed samples, the truncation of large bubbles with the surface resulted in a rough surface morphology. The relationships between annealing behavior of residual defects and implantation conditions are discussed. Removal of the dislocations near the a/c interface at 1000-degrees-C is attributed to the presence of a relatively low concentration of excess interstitials beneath the a/c interface as a result of low energy implant.