National Tsing Hua University Institutional Repository:ANNEALING BEHAVIORS OF RESIDUAL DEFECTS IN HIGH-DOSE BF2+-IMPLANTED (001)SI UNDER DIFFERENT IMPLANTATION CONDITIONS
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    National Tsing Hua University Institutional Repository > 工學院  > 工業工程與工程管理學系 > 期刊論文 >  ANNEALING BEHAVIORS OF RESIDUAL DEFECTS IN HIGH-DOSE BF2+-IMPLANTED (001)SI UNDER DIFFERENT IMPLANTATION CONDITIONS


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    题名: ANNEALING BEHAVIORS OF RESIDUAL DEFECTS IN HIGH-DOSE BF2+-IMPLANTED (001)SI UNDER DIFFERENT IMPLANTATION CONDITIONS
    作者: CHU, CH;TSAI, EL;CHAO, WY;CHEN, LJ
    教師: 瞿志行
    日期: 1991
    出版者: Elsevier
    關聯: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, Volume 55, Issues 1-4, 2 April 1991, Pages 193-197
    关键词: AMORPHOUS SI
    SILICON
    BORON
    JUNCTIONS
    PROFILES
    摘要: The annealing behavior of residual defects in high-dose BF2+-implanted (001)Si under different implantation conditions has been studied by cross-sectional transmission electron microscopy and four-point probe sheet resistance measurements. Three kinds of samples were prepared with different implanters. M, MC and H samples were implanted with 80 keV, 4 x 10(15)/cm2 BF2+ in a medium-current implanter without deliberate end-station cooling, a medium-current implanter with a freon-cooled end station, and a high-current implanter with a water-cooled end station, respectively. The BF2+ ion dissociation effects were revealed by the comparison of M or MC and H samples. Rod-like and equi-axial dislocation loops beneath the original a/c interface were observed in the M and MC samples. The dopant activation of the annealed samples was found to correlate well with microstructural changes.
    URI: http://www.elsevier.com/
    http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/46890
    显示于类别:[工業工程與工程管理學系] 期刊論文

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