National Tsing Hua University Institutional Repository:Characteristics and Thermal Stability of MOS devices with MoN/TiN and TiN/MoN metal gate stacks
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    NTHUR > College of Nuclear Science  > Department of Engineering and System Science  > ESS Conference Papers  >  Characteristics and Thermal Stability of MOS devices with MoN/TiN and TiN/MoN metal gate stacks


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/47108


    Title: Characteristics and Thermal Stability of MOS devices with MoN/TiN and TiN/MoN metal gate stacks
    Authors: Po-Yen Chien;Kuei-Shu Chang-Liao;Chung-Hao Fu
    Teacher: 張廖貴術
    Date: 2007
    Publisher: Elsevier
    Relation: 2007 International Semiconductor Device Research Symposium (ISDRS),T.21, College Park, MD, USA
    Keywords: metal gate
    MOS devices
    thermal stability
    Abstract: Metal gate with high work function is the key issue for MOS device. The influences of MoN metal gate with TiN layer above or below and various post metal annealing (PMA) treatments were studied in this work. Experimental results show that metal gate stack with TiN under MoN film (i.e., MoN/TiN sample) exhibits better electrical characteristics on gate leakage current, stress-induced flat-band voltage shift, and stress-induced leakage current and thermal stability despite a little lower work function. Thus MoN/TiN metal gate is promising for p-channel MOS device applications.
    URI: http://www.elsevier.com/
    http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/47108
    Appears in Collections:[Department of Engineering and System Science ] ESS Conference Papers

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