National Tsing Hua University Institutional Repository:Characteristics and Thermal Stability of MOS devices with MoN/TiN and TiN/MoN metal gate stacks
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    National Tsing Hua University Institutional Repository > 原子科學院  > 工程與系統科學系 > 會議論文  >  Characteristics and Thermal Stability of MOS devices with MoN/TiN and TiN/MoN metal gate stacks


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    题名: Characteristics and Thermal Stability of MOS devices with MoN/TiN and TiN/MoN metal gate stacks
    作者: Po-Yen Chien;Kuei-Shu Chang-Liao;Chung-Hao Fu
    教師: 張廖貴術
    日期: 2007
    出版者: Elsevier
    關聯: 2007 International Semiconductor Device Research Symposium (ISDRS),T.21, College Park, MD, USA
    关键词: metal gate
    MOS devices
    thermal stability
    摘要: Metal gate with high work function is the key issue for MOS device. The influences of MoN metal gate with TiN layer above or below and various post metal annealing (PMA) treatments were studied in this work. Experimental results show that metal gate stack with TiN under MoN film (i.e., MoN/TiN sample) exhibits better electrical characteristics on gate leakage current, stress-induced flat-band voltage shift, and stress-induced leakage current and thermal stability despite a little lower work function. Thus MoN/TiN metal gate is promising for p-channel MOS device applications.
    URI: http://www.elsevier.com/
    http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/47108
    显示于类别:[工程與系統科學系] 會議論文

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