English  |  正體中文  |  简体中文  |  Items with full text/Total items : 54367/62174 (87%)
Visitors : 14480866      Online Users : 41
RC Version 6.0 © Powered By DSPACE, MIT. Enhanced by NTHU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version
    National Tsing Hua University Institutional Repository > 原子科學院  > 工程與系統科學系 > 會議論文  >  Atomic and electronic structure of interfaces at SiC studied by indirect super HRTEM and electron spectroscopy imaging

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/47120

    Title: Atomic and electronic structure of interfaces at SiC studied by indirect super HRTEM and electron spectroscopy imaging
    Authors: Ichinose,Hideki;Chen,Fu-Rong;Takuma,Eriko;Yan,J. Y.;Kai,J. J.
    教師: 開執中
    Date: 2002
    Publisher: Materials Research Society
    Relation: Nanostructured Interfaces. Symposium (Mater. Res. Soc. Symposium Proceedings, Vol.727), 2002, p 169-75
    Keywords: Calculations
    Wavelet transforms
    Grain boundaries
    Electron spectroscopy
    Electronic structure
    Transmission electron microscopy
    Silicon carbide
    Interfaces (materials)
    Atomic physics
    Abstract: Obtaining electronic and atomic structure of material simultaneously is very important for developing the nano-technology. In this paper, we demonstrate that atomic and electronic structure of an interface can be extracted with combination of Gerchberg-Saxton indirect microscopy and electron spectroscopy imaging (ESI) technique. Basically, Gerchberg-Saxton algorithm includes two projections. Projection in the real space is a maximum entropy (ME) de-convolution process and in reciprocal space is an amplitude substitution process. It has been shown that Gerchberg-Saxton algorithm can extend the structural resolution to near 0.1 nm. An application case of Gerchberg-Saxton algorithm to solve the atomic structure for 3C-polytypic SiC boundary is shown. ESI spectrum processed by FFT interpolation, maximum entropy de-convolution and wavelet transformation allow us to extract 2-dimensional map of the sp2/sp3 with a sub-nanometer resolution. Grain boundary and interface at SiC are good candidates for this study, since the bond distance of Si-C is slightly less than 0.1 nm which is not routinely resolvable using a FEG TEM and Si-L (99eV) and C-K-edges (283 eV) locate in a reasonable energy range. The resultant electronic structure can be compared with that calculated using WIEN97. An example of quantitative analysis on 2-dimensional sp3/sp2 map deduced from the C K-edge of ESI spectra acquired from 6H-SiC is given.
    URI: http://www.mrs.org/
    Appears in Collections:[工程與系統科學系] 會議論文

    Files in This Item:

    There are no files associated with this item.


    SFX Query


    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback