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    National Tsing Hua University Institutional Repository > 原子科學院  > 工程與系統科學系 > 期刊論文 >  Direct observations of heteroepitaxial diamond on a silicon(110) substrate by microwave plasma chemical vapor deposition

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/47716

    Title: Direct observations of heteroepitaxial diamond on a silicon(110) substrate by microwave plasma chemical vapor deposition
    Authors: Chen,C. J.;Chang,L.;Lin,T. S.;Chen,F. R.
    教師: 陳福榮
    Date: 1996
    Publisher: Materials Research Society
    Relation: JOURNAL OF MATERIALS RESEARCH, Materials Research Society, Volume 11, Issue 4, 1996, Pages 1002-1010
    Keywords: Epitaxial growth
    Diamond films
    Plasma applications
    Chemical vapor deposition
    Transmission electron microscopy
    Film growth
    Crystal defects
    Semiconducting diamonds
    Abstract: Heteroepitaxial diamond has been successfully deposited on a Si(110) substrate by the microwave plasma chemical vapor deposition method. The pretreatment consisted of carburization and bias-enhanced nucleation steps. Cross-sectional transmission electron microscopy reveals that diamond can be in the cube-on-cube epitaxial relationship with the Si substrate. Various orientation relationships between diamond and Si substrates have also been observed, depending on the location where the plasma applied. Near the center of the plasma, twins were rarely observed in cube-on-cube epitaxial regions. Away from the center of the plasma ball, Σ3 twins are seen first, and then additional Σ9 and Σ27 twins occur near the edge of the plasma. In general, defect density in the epitaxial films is less than that observed in polycrystalline ones. No interlayer could be observed between diamond and silicon. In addition, 2H-type hexagonal diamond has also been found, and is in epitaxy with the Si substrate.
    URI: http://www.mrs.org/
    Appears in Collections:[工程與系統科學系] 期刊論文

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