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    National Tsing Hua University Institutional Repository > 工學院  > 材料科學工程學系 > 期刊論文 >  Microphotoluminescence and microphotoreflectance analyses of CO2 laser rapid-thermal-annealed SiOx surface with buried Si nanocrystals

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/52538

    Title: Microphotoluminescence and microphotoreflectance analyses of CO2 laser rapid-thermal-annealed SiOx surface with buried Si nanocrystals
    Authors: Lin GR;Lin CJ;Chou LJ;Chueh YL
    教師: 周立人
    Date: 2006
    Publisher: Institute of Electrical and Electronics Engineers
    Relation: Nanotechnology, IEEE Transactions on , Volume: 5 Issue:5 , pp.511 - 516
    Abstract: The optical properties of a SiOx film rapid-thermal-annealed (RTA) by CO2 laser are primarily investigated. The microphotoluminescence (mu-PL) and high-resolution transmission electron microscopy (HRTEM) analyses indicate that the precipitation of random-oriented Si nanocrystals can be initiated when laser intensity (P-laser) is larger than 4.5 kW/cm(2). At P-laser of 6 kW/cm(2), the Si nanocrystal exhibits a largest diameter of 8 run and a highest density of 4.5 x 10(16) cm(-3), which emits strong PL at 790-825 nm. The microphotoreflectance of the CO2 laser RTA SiOx film reveals a volume density product dependent refractive index increasing from 1.57 to 1.87 as P-laser increases from 1.5 to 7.5 kW/cm(2). Nonetheless, the laser ablation of the SiOx film occurs with a linear ablation slope of 35 nm/kW/cm(2) at beyond 7.5 kW/cm(2), which terminates the enlargement of Si nanocrystals, degrades the near-infrared PL, and slightly reduces the refractive index of the CO2 laser RTA SiOx film.
    URI: http://www.ieee.org/
    Appears in Collections:[材料科學工程學系] 期刊論文

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