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    National Tsing Hua University Institutional Repository > 工學院  > 材料科學工程學系 > 期刊論文 >  Interfacial self-cleaning in atomic layer deposition of HfO2 gate dielectric on In0.15Ga0.85As

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/52640

    Title: Interfacial self-cleaning in atomic layer deposition of HfO2 gate dielectric on In0.15Ga0.85As
    Authors: C.-H. Chang;Y.-K. Chiou;Y.-C. Chang;K.-Y. Lee;T.-D. Lin;T.-B. Wu;M. Hong;J. Kwo
    教師: 吳泰伯
    Date: 2006
    Publisher: American Institute of Physics
    Relation: Appl. Phys. Lett, Vol.89,pp.242911-1-3
    Keywords: MOS capacitors
    leakage currents
    Fermi level
    chemical exchanges
    atomic layer deposition
    surface cleaning
    III-V semiconductors
    high-k dielectric thin films
    hafnium compounds
    indium compounds
    gallium arsenide
    Abstract: An interfacial self-cleaning phenomenon was found in the atomic layer deposition of HfO2 on In0.15Ga0.85As/GaAs substrate using Hf(NCH3C2H5)4, i.e., TEMAH, and H2O as the precursors. The native oxides of InGaAs were all satisfactorily removed from the interface through ligand exchange (substitution) reactions with the TEMAH precursor. It relieves the Fermi-level pinning in the HfO2/InGaAs heterostructure, as verified by the clear transition from accumulation to depletion in high-frequency capacitance-voltage relations and inversion in quasistatic measurement. A very low leakage current was also found from the metal-oxide-semiconductor capacitors of Au/Ti/HfO2/InGaAs.
    URI: http://www.aip.org/
    Appears in Collections:[材料科學工程學系] 期刊論文

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