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    National Tsing Hua University Institutional Repository > 工學院  > 材料科學工程學系 > 期刊論文 >  Improvement on the growth of ultrananocrystalline diamond by using pre-nucleation technique

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/52740

    Title: Improvement on the growth of ultrananocrystalline diamond by using pre-nucleation technique
    Authors: Lee,Yen-Chih;Lin,Su-Jien;Pradhan,Debabrata;Lin,I-Nan
    教師: 林樹均
    Date: 2006
    Publisher: Elsevier
    Relation: Diamond and Related Materials
    Volume 15, Issues 2-3, February-March 2006, Pages 353-356
    Keywords: Diamonds
    Nanostructured materials
    Grain size and shape
    Abstract: Ultrananocrystalline diamond (UNCD) films, which possess very smooth surface, were synthesized using CH4/Ar plasma. When the nucleation process was carried out under methane and hydrogen (CH4/H 2) plasma with negative DC bias voltage, no pretreatment on substrate was required prior to the formation of diamond nuclei. The average grain size of BEN induced diamond nuclei is about 20 [similar to] 30 nm, with the nucleation site density more than 1011 sites/cm2. The growth rate of UNCD is markedly enhanced due to the application of BEN induced nuclei. Moreover, the growth rate of UNCD films was more significantly affected by the substrate temperature, but was less influenced by the microwave power. All of these UNCD films showed similar morphology, i.e., with grain size less than 10 nm and surface roughness around 10 nm. They also possess similar Raman spectra, i.e., similar crystallinity. However, the deposition rate can be increased from [similar to] 0.2 to 1.0 μm/h when substrate temperature increased from 400 to 600 °C.
    URI: http://www.elsevier.com/
    Appears in Collections:[材料科學工程學系] 期刊論文

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