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    National Tsing Hua University Institutional Repository > 工學院  > 材料科學工程學系 > 期刊論文 >  The microstructure of As precipitates in Si delta-doped GaAs grown by low-temperature molecular beam epitaxy

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/52967

    Title: The microstructure of As precipitates in Si delta-doped GaAs grown by low-temperature molecular beam epitaxy
    Authors: Hsieh LZ;Huang JH;Su ZA;Guo XJ;Shih HC;Wu MCY
    教師: 施漢章
    Date: 1997
    Publisher: Japan Society of Applied Physics
    Relation: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,Volume: 36,Issue: 11,Pages: 6614-6619,Published: NOV 1997
    Abstract: The structure relationship of the As precipitates found in post-annealed Si delta-doped GaAs layers grown by low-temperature molecular beam epitaxy is elucidated by transmission electron microscopy (TEM). There are six extra spots around the diffraction pattern of GaAs for a sample annealed at 700 degrees C. The As precipitates and GaAs matrix are found to be semicoherent with the hexagonal [-1-21](As) parallel to the cubic [110](GaAs). Because of the different lattice constants and Bravias lattices between GaAs and As precipitates, these extra spots are formed by double-diffraction effects. The high-resolution TEM images show two types of Moire fringes. One is the parallel Moire pattern and the other is the rotation Moire pattern. The relative positions of the extra spots in the diffraction pattern correspond to the orientation and spacing of Moire fringes.
    URI: http://ci.nii.ac.jp/naid/110003905911/en
    Appears in Collections:[材料科學工程學系] 期刊論文

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