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    National Tsing Hua University Institutional Repository > 工學院  > 材料科學工程學系 > 期刊論文 >  5-nm-thick TaSiC amorphous films stable up to 750 degrees C as a diffusion barrier for copper metallization

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/53222

    Title: 5-nm-thick TaSiC amorphous films stable up to 750 degrees C as a diffusion barrier for copper metallization
    Authors: Lin, Ting-Yi;Cheng, Huai-Yu;Chin, Tsung-Shune;Chiu, Chin-Fu;Fang, Jau-Shiung
    教師: 金重勳
    Date: 2007
    Publisher: American Institute of Physics
    Relation: APPLIED PHYSICS LETTERS,Volume: 91,Issue: 15,Article Number: 152908,Published: OCT 8 2007
    Keywords: TA-N FILMS
    Abstract: Ultrathin TaSiC amorphous films prepared by magnetron cosputtering using TaSi2 and C targets on Si(100), in a sandwiched scheme Si(100)/TaSiC(5 nm)/Cu, were evaluated for barrier performance in copper metallization. Optimizing carbon content maximizes thermal stability of the films as depicted by sheet-resistance, x-ray diffraction, and transmission electron microscopy examination. The stability temperatures of 700 degrees C (24 at. % C) and 750 degrees C (34 at. % C) have been systematically verified and discussed. Since Ta, Si, and C are compatible with integrated circuit (IC) processing, the TaSiC films are readily applicable for sub-65-nm IC production. (C) 2007 American Institute of Physics.
    URI: http://www.aip.org/
    Appears in Collections:[材料科學工程學系] 期刊論文

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