The temperature dependences of the Hall constant RH and resistivity ρ at various thickness for C54-TiSi2 films grown on (1 1 1) and (1 0 0) silicon substrates are measured. The resistivity increases as temperature increases with a character incongruent with the Bloch-Gruneisen equation as followed by normal metals. The magnitude of RH has a flat appearance at high temperatures (for T > 400 K), and increases as the temperature decreases and reaches a maximum value near 360 K, and then decreases to reverse the sign at low temperatures. The thinner the film thickness, the higher the temperature for sign reversal. The experimental data can be satisfactorily explained by the classical size effect and two-band model.