English  |  正體中文  |  简体中文  |  Items with full text/Total items : 54367/62174 (87%)
Visitors : 13845262      Online Users : 71
RC Version 6.0 © Powered By DSPACE, MIT. Enhanced by NTHU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version
    National Tsing Hua University Institutional Repository > 理學院 > 物理系 > 期刊論文 >  Scanning probe microscopy and lithography of ultrathin Si3N4 films grown on Si(111) and Si(001)


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/55044


    Title: Scanning probe microscopy and lithography of ultrathin Si3N4 films grown on Si(111) and Si(001)
    Authors: Gwo, S;Wu, CL;Chien, FSS;Yasuda, T;Yamasaki, S
    教師: 果尚志
    Date: 2001
    Publisher: Japanese Journal of Applied Physics
    Relation: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, Japanese Journal of Applied Physics, Volume 40, Issue 6B, JUN 2001, Pages 4368-4372
    Keywords: SI
    SURFACE
    THIN-FILMS
    MASK LAYERS
    NITROGEN-ATOMS
    ELECTRONIC-STRUCTURE
    TUNNELING-MICROSCOPY
    SILICON-NITRIDE
    SELECTIVE-AREA GROWTH
    VAPOR-PHASE EPITAXY
    Abstract: Scanning tunneling microscopy (STM) was used to study the surface structure of ultrathin single-crystal Si3N4 film prepared by thermal nitridation, on an [111]-oriented Si substrate. Hi.-h-resolution STM images indicate that both 8 x 8 and 8/3 x 8/3 orderings exist on the surface of the single-crystal Si3N4 film. We also found that ultrathin Si3N4 films (< 5 nm) formed by thermal nitridation or low-pressure chemical vapor deposition on doped Si(111) and Si(001) substrates are excellent mask materials for nanolithography. Local oxidation of crystalline or amorphous silicon nitride films can be reliably performed with a conductive-probe atomic force microscope (AFM) with an extremely fast initial oxidation rate (five to six orders of magnitude higher than the thermal oxidation rate at 1000 degreesC) at a sample bias of +10 V. The nanopatterned silicon nitride masks can be used for selective-area high-aspect-ratio etching and epitaxial growth with large selectivities. Using an AFM-patterned SiO2/Si3N4 bilayer mask, selectively grown Si dots and lines of high crystalline perfection were successfully obtained.
    URI: http://jjap.ipap.jp/
    http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/55044
    Appears in Collections:[物理系] 期刊論文

    Files in This Item:

    File Description SizeFormat
    index.html0KbHTML417View/Open


    在NTHUR中所有的資料項目都受到原著作權保護,僅提供學術研究及教育使用,敬請尊重著作權人之權益。若須利用於商業或營利,請先取得著作權人授權。
    若發現本網站收錄之內容有侵害著作權人權益之情事,請權利人通知本網站管理者(smluo@lib.nthu.edu.tw),管理者將立即採取移除該內容等補救措施。

    SFX Query

    與系統管理員聯絡

    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback