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    National Tsing Hua University Institutional Repository > 理學院 > 物理系 > 期刊論文 >  1 nm equivalent oxide thickness in Ga2O3(Gd2O3)/In0.2Ga0.8As metal-oxide-semiconductor capacitors


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/55488


    Title: 1 nm equivalent oxide thickness in Ga2O3(Gd2O3)/In0.2Ga0.8As metal-oxide-semiconductor capacitors
    Authors: Shiu, K. H.;Chiang, T. H.;Chang, P.;Tung, L. T.;Hong, M.;Kwo, J.;Tsai, W.
    教師: 郭瑞年
    Date: 2008
    Publisher: American Institute of Physics
    Relation: APPLIED PHYSICS LETTERS, American Institute of Physics, Volume 92, Issue 17, 2008
    Keywords: GAAS MOSFETS
    GA2O3
    PASSIVATION
    Abstract: An equivalent oxide thickness about 1 nm for Ga2O3(Gd2O3) (GGO) on In0.2Ga0.8As has been achieved by employing a thin in situ deposited 3 nm thick Al2O3 protection layer. The dual gate oxide stacks of the Al2O3/GGO (33, 20, 10, 8.5, and 4.5 nm)/In0.2Ga0.8As/GaAs metal-oxide-semiconductor (MOS) capacitors remain amorphous after rapid thermal annealing up to 800-850 degrees C, accompanied with atomically sharp smooth oxide/semiconductor interfaces. Well behaved capacitance-voltage (C-V) curves of the MOS diodes have shown sharp transition from depletion to accumulation with small flatband voltage (1.1 V for Au metal gate and 0.1 V for Al), and weak frequency dispersion (1.5%-5.4%) between 10 and 500 kHz at accumulation capacitance. Low leakage current densities [3.1x10(-5) and 2.5x10(-9) A/cm(2) at V=V-fb+1 V for Al2O3(3 nm)/GGO(4.5 and 8.5 nm)], a high dielectric constant around 14-16 of GGO for all tested thicknesses, and a low interfacial density of states (D-it) in the low 10(11) cm(-2) eV(-1) have also been accomplished. (C) 2008 American Institute of Physics.
    URI: http://www.aip.org/
    http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/55488
    Appears in Collections:[物理系] 期刊論文

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