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    National Tsing Hua University Institutional Repository > 理學院 > 物理系 > 期刊論文 >  Interfacial self-cleaning in atomic layer deposition of HfO2 gate dielectric on In0.15Ga0.85As

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/55535

    Title: Interfacial self-cleaning in atomic layer deposition of HfO2 gate dielectric on In0.15Ga0.85As
    Authors: Chang, C. -H.;Chiou, Y. -K.;Chang, Y. -C.;Lee, K. -Y.;Lin, T. -D.;Wu, T. -B.;Hong, M.;Kwo, J.
    教師: 郭瑞年
    Date: 2006
    Publisher: American Institute of Physics
    Relation: APPLIED PHYSICS LETTERS, American Institute of Physics, Volume 89, Issue 24, DEC 11 2006
    Abstract: An interfacial self-cleaning phenomenon was found in the atomic layer deposition of HfO2 on In0.15Ga0.85As/GaAs substrate using Hf(NCH3C2H5)(4), i.e., TEMAH, and H2O as the precursors. The native oxides of InGaAs were all satisfactorily removed from the interface through ligand exchange (substitution) reactions with the TEMAH precursor. It relieves the Fermi-level pinning in the HfO2/InGaAs heterostructure, as verified by the clear transition from accumulation to depletion in high-frequency capacitance-voltage relations and inversion in quasistatic measurement. A very low leakage current was also found from the metal-oxide-semiconductor capacitors of Au/Ti/HfO2/InGaAs. (c) 2006 American Institute of Physics.
    URI: http://www.aip.org/
    Appears in Collections:[物理系] 期刊論文

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