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    National Tsing Hua University Institutional Repository > 理學院 > 物理系 > 期刊論文 >  Structure of HfO2 films epitaxially grown on GaAs(001)


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/55546


    Title: Structure of HfO2 films epitaxially grown on GaAs(001)
    Authors: Hsu, C. -H.;Chang, P.;Lee, W. C.;Yang, Z. K.;Lee, Y. J.;Hong, M.;Kwo, J.;Huang, C. M.;Lee, H. Y.
    教師: 郭瑞年
    Date: 2006
    Publisher: American Institute of Physics
    Relation: APPLIED PHYSICS LETTERS, American Institute of Physics, Volume 89, Issue 12, SEP 18 2006
    Keywords: ATOMIC-LAYER DEPOSITION
    X-RAY-DIFFRACTION
    HAFNIUM OXIDE
    ZRO2
    Abstract: High-quality HfO2 films of technologically important thickness ranging from 1.8 to 17 nm have been grown epitaxially on GaAs (001) by molecular beam epitaxy. Thorough structural and morphological investigations were carried out by x-ray scattering and high-resolution transmission electron microscopy. The films exhibit an atomically sharp interface with the substrate and are of a monoclinic phase with predominant (001)-plane epitaxy between the HfO2 films and GaAs, in spite of a large lattice mismatch of > 8.5%.
    URI: http://www.aip.org/
    http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/55546
    Appears in Collections:[物理系] 期刊論文

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