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    National Tsing Hua University Institutional Repository > 理學院 > 物理系 > 期刊論文 >  Schottky barrier height and interfacial state density on oxide-GaAs interface


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/55990


    Title: Schottky barrier height and interfacial state density on oxide-GaAs interface
    Authors: Hwang, J.S.;Chang, C.C.;Chen, M.F.;Chen, C.C.;Lin, K.I.;Tang, F.C.;Hong, M.;Kwo, J.
    教師: 郭瑞年
    Date: 2003
    Publisher: American Institute of Physics
    Relation: JOURNAL OF APPLIED PHYSICS, American Institute of Physics, Volume 94, Issue 1, JUL 1 2003, Pages 348-353
    Keywords: FRANZ-KELDYSH OSCILLATIONS
    SURFACE FERMI-LEVEL
    SCANNING TUNNELING MICROSCOPY
    MODULATION SPECTROSCOPY
    ELECTRONIC-PROPERTIES
    BIPOLAR-TRANSISTOR
    GALLIUM-ARSENIDE
    PHOTOREFLECTANCE
    PASSIVATION
    INALAS
    Abstract: Photoreflectance (PR) and Raman spectra were employed to investigate the interfacial characteristics of a series of oxide films on GaAs. The barrier heights across the interfaces and the densities of interfacial states are determined from the PR intensity as a function of the pump power density. The oxide-GaAs structures fabricated by in situ molecular beam epitaxy exhibit low interfacial state densities in the low 1011 cm-2 range. The density of the interface states of the Ga2O3(Gd2O3)-GaAs structure is as low as (1.24±0.14)×1010 cm-2. The Ga2O3(Gd2O3) dielectric film has effectively passivated the GaAs surface. Additionally, Raman spectra were used to characterize the structural properties of the oxide films
    URI: http://www.aip.org/
    http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/55990
    Appears in Collections:[物理系] 期刊論文

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