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    National Tsing Hua University Institutional Repository > 理學院 > 物理系 > 期刊論文 >  GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/55994

    Title: GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition
    Authors: P. D. Ye;G. D. Wilk;B. Yang, J. Kwo;S. N. G. Chu;S. Nakahara;H.-J. L. Gossmann;J. P. Mannaerts;M. Hong;K. K. Ng;J. Bude
    教師: 郭瑞年
    Date: 2003
    Publisher: American Institute of Physics
    Relation: Applied Physics Letters, American Institute of Physics, Volume 83, Issue 1, 2003, Pages 180-182
    Keywords: GATE INSULATOR
    Abstract: A GaAs metal-oxide-semiconductor field-effect transistor (MOSFET) with thin Al2O3 gate dielectric in nanometer (nm) range grown by atomic layer deposition is demonstrated. The nm-thin oxide layer with significant gate leakage current suppression is one of the key factors in downsizing field-effect transistors. A 1 mum gate-length depletion-mode n-channel GaAs MOSFET with an Al2O3 gate oxide thickness of 8 nm, an equivalent SiO2 thickness of similar to3 nm, shows a broad maximum transconductance of 120 mS/mm and a drain current of more than 400 mA/mm. The device shows a good linearity, low gate leakage current, and negligible hysteresis in drain current in a wide range of bias voltage. (C) 2003 American Institute of Physics
    URI: http://www.aip.org/
    Appears in Collections:[物理系] 期刊論文

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