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    National Tsing Hua University Institutional Repository > 理學院 > 物理系 > 期刊論文 >  Achieving 1 nm capacitive effective thickness in atomic layer deposited HfO2 on In0.53Ga0.47As

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/56051

    Title: Achieving 1 nm capacitive effective thickness in atomic layer deposited HfO2 on In0.53Ga0.47As
    Authors: Lee, K.Y.;Lee, Y.J.;Chang, P.;Huang, M.L.;Chang, Y.C.;Hong, M.1;Kwo, J.
    教師: 郭瑞年
    Date: 2008
    Publisher: American Institute of Physics
    Relation: APPLIED PHYSICS LETTERS, American Institute of Physics, Volume 92, Issue 25, 2008
    Keywords: capacitive effective thickness (CET)
    atomic layer deposited (ALD)
    high κ dielectrics
    Abstract: A capacitive effective thickness (CET) value of 1.0 nm has been achieved in atomic layer deposited (ALD) high κ dielectrics HfO2 on In0.53Ga0.47As/InP. The key is a short air exposure under 10 min between removal of the freshly grown semiconductor epilayers and loading to the ALD reactor. This has led to minimal formation of the interfacial layer thickness, as confirmed using x-ray photoelectron spectroscopy and high-resolution transmission electron microscopy. The measured electrical characteristics of metal-oxide-semiconductor diodes of Au/Ti/HfO2(4.5 nm)/In0.53Ga0.47As showed a low leakage current density of 3.8×10-4 A/cm2 at VFB+1 V, which is about eight orders of magnitudes lower than that of SiO2 with the same CET. The capacitance-voltage curves show an overall κ value of 17-18, a nearly zero flatband shift, and an interfacial density of states Dit of 2×1012 cm-2 eV-1.
    URI: http://www.aip.org/
    Appears in Collections:[物理系] 期刊論文

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