English  |  正體中文  |  简体中文  |  Items with full text/Total items : 54367/62174 (87%)
Visitors : 14412726      Online Users : 37
RC Version 6.0 © Powered By DSPACE, MIT. Enhanced by NTHU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version
    National Tsing Hua University Institutional Repository > 理學院 > 物理系 > 會議論文  >  Single crystal rare earth oxides epitaxially grown on GaN

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/56230

    Title: Single crystal rare earth oxides epitaxially grown on GaN
    Authors: Hong, M.;Kortan, A.R.;Kwo, J.;Mannaerts, J.P.;Lee, C.M.;Chyi, J.I.
    教師: 郭瑞年
    Date: 2000
    Publisher: Institute of Electrical and Electronics Engineers
    Relation: Compound Semiconductors, 2000 IEEE International Symposium on, Monterey, CA, USA, 2-5 Oct. 2000, Pages 495 - 500
    Keywords: ultra-high vacuum
    Single-crystal X-ray
    high temperature hexagonal phases
    Abstract: New single crystals of Gd2O3 and Y2O3 were found to grow epitaxially on GaN in ultra-high vacuum. In-situ reflection high-energy electron diffraction reveals a six-fold symmetry in the in-plane epitaxy of the rare earth oxides. Single-crystal X-ray diffraction measurements find that these single-crystal oxide films are indeed the high temperature hexagonal phases of the sesquioxides, stabilized by the GaN substrate epitaxy. Despite a large mismatch in lattice constant the fully relaxed oxide films are of excellent structural quality
    URI: http://ieeexplore.ieee.org
    Appears in Collections:[物理系] 會議論文

    Files in This Item:

    File Description SizeFormat
    2010113030005.pdf423KbAdobe PDF250View/Open


    SFX Query


    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback