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    National Tsing Hua University Institutional Repository > 工學院  > 材料科學工程學系 > 專利  >  Method for fabricating shallow trench isolation structure

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/58541

    Title: Method for fabricating shallow trench isolation structure
    Authors: Yang, Gwo-Shii;Yew, Tri-Rung;Chen, Coming;Lur, Water
    教師: 游萃蓉
    Date: 2001/10/23
    Relation: 專利權人:United Microelectronics Corp., Hsinchu, Taiwan
    Keywords: shallow trench
    pad oxide layer
    silicon nitride layer
    doped silicon dioxide layer
    Abstract: A method for fabricating, a shallow trench isolation structure. A pad oxide layer and a silicon nitride layer are formed in sequence on a substrate. A trench is formed in the substrate and a liner oxide layer is formed on a sidewall of the trench. A doped silicon dioxide layer is formed on the silicon nitride layer and fills the trench. An annealing process is performed to density the doped silicon dioxide layer. A portion of the doped silicon dioxide layer is removed to expose the silicon nitride layer by a planarization process.
    URI: http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&u=%2Fnetahtml%2FPTO%2Fsearch-adv.htm&r=8&f=G&l=50&d=PTXT&p=1&S1=6306722&OS=6306722&RS=6306722;
    Appears in Collections:[材料科學工程學系] 專利

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