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    National Tsing Hua University Institutional Repository > 工學院  > 材料科學工程學系 > 專利  >  Method for manufacturing shallow trench isolation structure

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/58571

    Title: Method for manufacturing shallow trench isolation structure
    Authors: Yang, Gwo-Shii;Huang, Kuo-Tai;Yew, Tri-Rung;Lur, Water
    教師: 游萃蓉
    Date: 2000/7/11
    Relation: 專利權人:United Microelectronics Corp., Hsinchu, Taiwan
    Keywords: trench
    isolation structure
    self-aligned silicon nitride
    kink effect
    silicon nitride
    conventional reverse tone mask
    Abstract: A method for manufacturing shallow trench isolation structure includes the steps of fabricating a self-aligned silicon nitride mask over the trench region so that a kink effect due to the misalignment of mask during a conventional mask-making process can be avoided. Moreover, the silicon nitride mask requires fewer steps and less complicated operations to construct than a conventional reverse tone mask.
    URI: http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&u=%2Fnetahtml%2FPTO%2Fsearch-adv.htm&r=7&f=G&l=50&d=PTXT&p=1&S1=6087262&OS=6087262&RS=6087262;
    Appears in Collections:[材料科學工程學系] 專利

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