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    National Tsing Hua University Institutional Repository > 研究中心 > 奈微與材料科技中心 > 期刊論文 >  Electron Field Emission Properties of Nanomaterials on Rough Silicon Rods

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/61607

    Title: Electron Field Emission Properties of Nanomaterials on Rough Silicon Rods
    Authors: Wu, Hung-Chi;Tsai, Tsung-Yen;Chu, Fu-Hsuan;Tai, Nyan-Hwa;Lin, Heh-Nan;Chiu, Hsin-Tien;Lee, Chi-Young
    教師: 李紫原
    Date: 2010
    Publisher: American Chemical Society
    Relation: JOURNAL OF PHYSICAL CHEMISTRY C,Volume: 114,Issue: 1,Pages: 130-133,Published: JAN 14 2010
    Abstract: Highly porous, individually separated, and vertically aligned rough silicon rods (r-SiRs) were formed via a modified electroless metal deposition (EMD) approach. Despite inheriting the length of crowded silicon nanowires (NWs) obtained by the conventionally adopted EMD method, the r-SiRs are distributed sparsely, subsequently forming an excellent field emitter substrate. The electron field emission (EFE) of carbon nanotubes (CNTs) grown on r-SiRs can be turned on at (E-0)(CNTs/r-SiRs) = 2.3 V/mu m, yielding a high EFE current density, (J(c))(CNTs/r-SiR) = 3.7 mA/cm(2) in an applied field of 5.1 V/mu m, Additionally, a cactuslike structure consisting of zinc oxide NWs on r-SiRs can be turned on at 2.9 V/mu m. The absence of a high-temperature or expensive photolithographic process makes r-SiRs a promising alternative as a silicon base field emitter substrate.
    URI: http://pubs.acs.org/
    Appears in Collections:[奈微與材料科技中心] 期刊論文

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