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    National Tsing Hua University Institutional Repository > 研究中心 > 奈微與材料科技中心 > 期刊論文 >  Chemical Vapor Deposition of TiSi Nanowires on C54 TiSi2 Thin Film: An Amorphous Titanium Silicide Interlayer Assisted Nanowire Growth

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/61609

    Title: Chemical Vapor Deposition of TiSi Nanowires on C54 TiSi2 Thin Film: An Amorphous Titanium Silicide Interlayer Assisted Nanowire Growth
    Authors: Lin, Huang-Kai;Cheng, Hsin-An;Lee, Chi-Young;Chiu, Hsin-Tien
    教師: 李紫原
    Date: 2009
    Publisher: American Chemical Society
    Relation: CHEMISTRY OF MATERIALS,American Chemical Society,Volume: 21,Issue: 22,Pages: 5388-5396,Published: NOV 24 2009
    Abstract: A C54-TiSi2 film was grown on a Si substrate at 1073 K by low pressure chemical vapor deposition (LPCVD) employing titanium subchlorides TiClx((g)), generated by reacting between TiCl4(g) and Ti-(s) at 1173 K, as the Ti source. Growth of titanium silicide (TiSi) nanowires (NWs; diameter 30-80 rim, length several micrometers) on a C54-TiSi2 film was observed. Growth direction of the NWs was determined to be along the [010] axis. An amorphous titanium silicide interlayer was observed between the NWs and the C54-TiSi2 film. This interlayer, probably existing as a quasi-liquid thin film during the growth, appears to be the key factor to assist the NW development. Field emission properties, turn-on field E-o and field enhancement factor beta, of the vertically grown TiSi NWs were determined to be 5.25 V mu m(-1) and 876, respectively
    URI: http://pubs.acs.org/
    Appears in Collections:[奈微與材料科技中心] 期刊論文

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