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    National Tsing Hua University Institutional Repository > 工學院  > 材料科學工程學系 > 期刊論文 >  Enhanced electrochemical properties of arrayed CNx nanotubes directly grown on Ti-buffered silicon substrates

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/62278

    Title: Enhanced electrochemical properties of arrayed CNx nanotubes directly grown on Ti-buffered silicon substrates
    Authors: Fang WC;Sun CL;Huang JH;Chen LC;Chyan O;Chen KH;Papakonstantinou P
    教師: 黃金花
    Date: 2006
    Publisher: Electrochemical Society
    Relation: ELECTROCHEMICAL AND SOLID STATE LETTERS,Volume: 9,Issue: 3,Pages: A175-A178,Published: 2006
    Abstract: The effects of a Ti buffer layer on structural and electrochemical properties of arrayed nitrogen-containing carbon nanotubes (CNx NTs) directly grown on Si substrates have been investigated. Cyclic voltammograms using Fe(CN)(6)(3-)/Fe(CN)(6)(4-) as redox couple were measured to study the electrochemical activities of CNx NTs. The highest peak current density was achieved at an optimal Ti thickness of 20 nm owing to the good conductivity of TiSi2 and high number density of NTs. Therefore, we have demonstrated the direct growth of aligned NTs on Ti- buffered Si with improved electrochemical activity that is believed to be suitable for advanced microsystem applications. (c) 2006 The Electrochemical Society.
    URI: http://www.electrochem.org/
    Appears in Collections:[材料科學工程學系] 期刊論文

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