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    National Tsing Hua University Institutional Repository > 工學院  > 材料科學工程學系 > 期刊論文 >  Sn/Pd catalyzation and electroless Cu deposition on TaN diffusion barrier layers

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/62294

    Title: Sn/Pd catalyzation and electroless Cu deposition on TaN diffusion barrier layers
    Authors: Hsu HH;Teng CW;Lin SJ;Yeh JW
    教師: 葉均蔚
    Date: 2002
    Publisher: Electrochemical Society
    Relation: JOURNAL OF THE ELECTROCHEMICAL SOCIETY,Volume: 149,Issue: 3,Pages: C143-C149,Published: MAR 2002
    Abstract: The catalyzation of TaN/SiO2/Si substrates was carried out by immersion in SnCl2/HCl and PdCl2/HCl solutions for electroless Cu deposition. The sizes and morphologies of the catalytic sites on the TaN layers were found to be a function of catalyzation conditions, including solution temperature, immersion time, and the surface oxides. The appropriate formula for catalyzation was obtained by considering both the quality and efficiency. The catalytic sites were composed of Sn and Pd, and the ratio of Sn/Pd was about 1.3. During electroless Cu deposition on the catalyzed TaN/SiO2/Si substrates, Cu nuclei first formed at the catalytic sites in the early stage, gradually agglomerated into dense islands, and finally merged to continuous deposition films. The Cu films were uniformly and smoothly deposited with a surface roughness of 6.2 nm under a film thickness of 210 nm. The lowest electrical resistivity of the Cu films was 2.5 muOmega cm, and the residual resistivity contributed to the participation of Sn-Pd catalyst and internal defects. Good gap-filling capability of electroless Cu deposition on Sn/Pd catalyzed, patterned substrates exhibited its high potential to act as a seed layer for Cu electrodeposition and even to completely fill submicrometer gaps in ultralarge-scale integrated metallization.
    URI: http://www.electrochem.org/
    Appears in Collections:[材料科學工程學系] 期刊論文

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