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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 會議論文  >  Growth mechanism in the multiple buffer layer of GaN on sapphire by organometallic vapor phase epitaxy

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/68056

    Title: Growth mechanism in the multiple buffer layer of GaN on sapphire by organometallic vapor phase epitaxy
    Authors: Chien-Chena Yang1;Meng-Chyi Wu;Yieng-Chieh Hung;Gou-Chung Chi
    教師: 吳孟奇
    Date: 1999
    Publisher: Electrochemical Society
    Relation: Proceedings of State-of-the-Art Program on Compound Semiconductors XXXI, Honolulu, HI, USA, 17-22 Oct. 1999
    Keywords: wide band gap semiconductors
    vapour phase epitaxial growth
    transmission electron microscopy
    semiconductor growth
    semiconductor epitaxial layers
    gallium compounds - III-V semiconductors
    Abstract: High-quality GaN epitaxial layers with a multiple-pair buffer layer have been grown on sapphire substrates in a separate-flow reactor by metalorganic chemical vapor deposition. Each pair of buffer layers consists of a 300 Å thick GaN nucleation layer grown at a low temperature of 525°C and a 1-4 μm thick GaN epitaxial layer grown at a high temperature of 1000°C. The GaN samples with a multiple-pair buffer layers are characterized by etch-pit density and cross-section TEM measurements. In this experiment, the regions grown on multiple buffer layers were thoroughly examined. Cross-section TEM clearly revealed characteristic defects along the [112¯0] direction in the various pairs of buffer-layer grown regions. We observed the interface of buffer layer and buffer layer, where most vertical dislocations can be terminated in the interface, and few dislocation were repropagated in the subsequent buffer-layer growth. The influence of multiple buffer structure and the dislocation distribution near the buffer-layer interface are discussed
    Relation Link: http://www.electrochem.org/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/68056
    Appears in Collections:[電機工程學系] 會議論文

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