English  |  正體中文  |  简体中文  |  Items with full text/Total items : 54367/62174 (87%)
Visitors : 14419592      Online Users : 38
RC Version 6.0 © Powered By DSPACE, MIT. Enhanced by NTHU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version
    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 會議論文  >  The improvement of GaN epitaxial layers quality by use of separate-flow reactor

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/68136

    Title: The improvement of GaN epitaxial layers quality by use of separate-flow reactor
    Authors: C. C. Yang;G. C. Chi;C. K. Huang;M. C. Wu
    教師: 吳孟奇
    Date: 1998
    Publisher: Springer Verlag
    Relation: Proceedings of the 1998 International Photonics Conference, T-S1-B2, Taipei, Taiwan, Dec. 15-18, 1998, Pages 374-376
    Keywords: GaN
    Relation Link: http://www.springerlink.com/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/68136
    Appears in Collections:[電機工程學系] 會議論文

    Files in This Item:

    There are no files associated with this item.


    SFX Query


    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback