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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 期刊論文 >  Arsenic precipitate accumulation in alternately Si/Be delta-doped GaAs grown by low-temperature molecular beam epitaxy

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/71677

    Title: Arsenic precipitate accumulation in alternately Si/Be delta-doped GaAs grown by low-temperature molecular beam epitaxy
    Authors: Hsieh LZ;Huang JH;Su ZA;et al.
    教師: 吳孟奇
    Date: 1998
    Publisher: Japan Society of Applied Physics
    Relation: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, Japan Society of Applied Physics, Volume 37,   Issue 3B, MAR 15 1998, Pages L319-L321
    Keywords: LAYERS
    Abstract: The precipitation of arsenic in alternately [Si]=1.0 x 10(13) cm(-2) and [Be]=1.0 x 10(14) cm(-2) delta-doped GaAs grown at low temperature by molecular beam epitaxy has been studied using transmission electron microscopy. Following annealing at 600, 700 and 800 degrees C, As precipitates were found to form preferentially not only on planes of Si but also on planes of Be. The as-grown and annealed samples were also characterized using secondary ion mass spectroscopy, and the results revealed that the interdiffusion of Si and Be dopants due to annealing was discernible. This is the first observation of As precipitate accumulation on Be delta-doped planes in low-temperature grown GaAs.
    Relation Link: http://www.jsap.or.jp/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/71677
    Appears in Collections:[電機工程學系] 期刊論文

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