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    National Tsing Hua University Institutional Repository > 理學院 > 物理系 > 期刊論文 >  Enhanced photoresponse of a metal-oxide-semiconductor photodetector with silicon nanocrystals embedded in the oxide layer

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/82208

    Title: Enhanced photoresponse of a metal-oxide-semiconductor photodetector with silicon nanocrystals embedded in the oxide layer
    Authors: Jia-Min Shieh;Yi-Fan Lai;Wei-Xin Ni;Hao-Chung Kuo;Chih-Yao Fang;Jung Y. Huang;Ci-Ling Pan
    教師: 潘犀靈
    Date: 2007
    Publisher: American Institute of Physics
    Relation: Appl. Phys. Lett., Vol. 90, art. 051105, January 30, 2007
    Keywords: POROUS SILICON
    Abstract: The authors report a two-terminal metal-oxide-semiconductor photodetector for which light is absorbed in a capping layer of silicon nanocrystals embedded in a mesoporous silica matrix on p-type silicon substrates. Operated at reverse bias, enhanced photoresponse from 300 to 700 nm was observed. The highest optoelectronic conversion efficiency is as high as 200%. The enhancements were explained by a transistorlike mechanism, in which the inversion layer acts as the emitter and trapped positive charges in the mesoporous dielectric layer assist carrier injection from the inversion layer to the contact, such that the primary photocurrent could be amplified.
    URI: http://www.aip.org/
    Appears in Collections:[物理系] 期刊論文

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