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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 會議論文  >  An Offset-Tolerant Current-Sampling-Based Sense Amplifier for Sub-100nA-Cell-Current Nonvolatile Memory

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/83996

    Title: An Offset-Tolerant Current-Sampling-Based Sense Amplifier for Sub-100nA-Cell-Current Nonvolatile Memory
    Authors: Meng-Fan Chang;Shin-Jang Shen;Chia-Chi Liu;Che-Wei Wu;Yu-Fan Lin;Shang-Chi Wu;Chia-En Huang;Han-Chao Lai;Ya-Chin King;Chorng-Jung Lin;Hung-Jen Liao;Yu-Der Chih;Yamauchi, H.
    教師: 林崇榮
    Date: 2011
    Publisher: Institute of Electrical and Electronics Engineers
    Relation: Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2011 IEEE International, San Francisco, CA, 20-24 Feb. 2011, Pages 206 - 208
    Keywords: Current-Sampling-Based
    Abstract: In this study, the authors propose a new offset tolerant current-sampling-based SA (CSB-SA) to achieve 7x faster read speed than previous SAs for sensing small ICELL. A fabricated 90nm 512Kb OTP macro, using the CSB-SA and our CMOS-logic compatible OTP cell, achieves 26ns macro random access time for reading sub-200nA lCELL. Measurements also confirmed that this 90nm CSB-SA could achieve sub-100nA sensing.
    Relation Link: http://www.ieee.org/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/83996
    Appears in Collections:[電機工程學系] 會議論文
    [電子工程研究所] 會議論文

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