National Tsing Hua University Institutional Repository:The charge trapping effect of metal-ferroelectric (PbZr0.53Ti0.47O3)-insulator (HfO2)-silicon capacitors
English  |  正體中文  |  简体中文  |  Items with full text/Total items : 54367/62174 (87%)
Visitors : 15079614      Online Users : 94
RC Version 6.0 © Powered By DSPACE, MIT. Enhanced by NTHU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version
    NTHUR > College of Electrical Engineering and Computer Science > Department of Electrical Engineering > EE Journal / Magazine Articles  >  The charge trapping effect of metal-ferroelectric (PbZr0.53Ti0.47O3)-insulator (HfO2)-silicon capacitors

    Please use this identifier to cite or link to this item:

    Title: The charge trapping effect of metal-ferroelectric (PbZr0.53Ti0.47O3)-insulator (HfO2)-silicon capacitors
    Authors: Pi-chun Juan
    Yu-ping Hu
    Fu-chien Chiu
    Lee, J.Y.
    Date: 2005
    Publisher: American Institute of Physics
    Keywords: band structure
    charge injection
    current density
    elemental semiconductors
    ferroelectric capacitors
    Abstract: Metal-ferroelectric-insulator-semiconductor (MFIS) capacitors with a Pb(Zr0.53,Ti0.47)O3 ferroelectric layer and a hafnium oxide insulator layer have been fabricated and characterized. The size of the capacitance-voltage memory windows was investigated. The memory window first increases to a saturated value of 0.7 V with the sweep voltage and then decreases due to charge injection. The oxide trapped charges in the ferroelectric/insulator layers are studied by a voltage stress method. The flatband voltage (VFB) is measured before and after the voltage stress. The ΔVFB is 0.59 V at a negative stress voltage pulse of -5 V for 30 s. The ΔVFB under positive voltage stress was much less and was 0.06 V at a stress voltage of +5 V for 5 min. The energy-band diagram of the MFIS structure at inversion and accumulation modes are plotted and the VFB shift can be explained by the trapping or detrapping of charges. The current-density versus stress time (J-t) characteristics were also measured. The result is consistent with the charge trapping model
    Relation Link:
    Appears in Collections:[Department of Electrical Engineering] EE Journal / Magazine Articles
    [Institute of Electronics Engineering ] ENE Journal / Magazine Articles

    Files in This Item:

    File Description SizeFormat
    2030179010065.pdf124KbAdobe PDF973View/Open


    SFX Query


    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback