National Tsing Hua University Institutional Repository:The charge trapping effect of metal-ferroelectric (PbZr0.53Ti0.47O3)-insulator (HfO2)-silicon capacitors
English  |  正體中文  |  简体中文  |  全文笔数/总笔数 : 54367/62174 (87%)
造访人次 : 15024098      在线人数 : 162
RC Version 6.0 © Powered By DSPACE, MIT. Enhanced by NTHU Library IR team.
搜寻范围 查询小技巧:
  • 您可在西文检索词汇前后加上"双引号",以获取较精准的检索结果
  • 若欲以作者姓名搜寻,建议至进阶搜寻限定作者字段,可获得较完整数据
  • 进阶搜寻
    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 期刊論文 >  The charge trapping effect of metal-ferroelectric (PbZr0.53Ti0.47O3)-insulator (HfO2)-silicon capacitors


    题名: The charge trapping effect of metal-ferroelectric (PbZr0.53Ti0.47O3)-insulator (HfO2)-silicon capacitors
    作者: Pi-chun Juan
    Yu-ping Hu
    Fu-chien Chiu
    Lee, J.Y.
    日期: 2005
    出版者: American Institute of Physics
    关键词: band structure
    charge injection
    current density
    elemental semiconductors
    ferroelectric capacitors
    摘要: Metal-ferroelectric-insulator-semiconductor (MFIS) capacitors with a Pb(Zr0.53,Ti0.47)O3 ferroelectric layer and a hafnium oxide insulator layer have been fabricated and characterized. The size of the capacitance-voltage memory windows was investigated. The memory window first increases to a saturated value of 0.7 V with the sweep voltage and then decreases due to charge injection. The oxide trapped charges in the ferroelectric/insulator layers are studied by a voltage stress method. The flatband voltage (VFB) is measured before and after the voltage stress. The ΔVFB is 0.59 V at a negative stress voltage pulse of -5 V for 30 s. The ΔVFB under positive voltage stress was much less and was 0.06 V at a stress voltage of +5 V for 5 min. The energy-band diagram of the MFIS structure at inversion and accumulation modes are plotted and the VFB shift can be explained by the trapping or detrapping of charges. The current-density versus stress time (J-t) characteristics were also measured. The result is consistent with the charge trapping model
    显示于类别:[電機工程學系] 期刊論文
    [電子工程研究所] 期刊論文


    档案 描述 大小格式浏览次数
    2030179010065.pdf124KbAdobe PDF970检视/开启


    SFX Query


    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 回馈