National Tsing Hua University Institutional Repository:AlGaAs/GaAs charge injection transistor/negative resistance field-effect transistor fabricated with shallow Pd/Ge ohmic contacts
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    NTHUR > College of Electrical Engineering and Computer Science > Department of Electrical Engineering > EE Journal / Magazine Articles  >  AlGaAs/GaAs charge injection transistor/negative resistance field-effect transistor fabricated with shallow Pd/Ge ohmic contacts


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/12126


    Title: AlGaAs/GaAs charge injection transistor/negative resistance field-effect transistor fabricated with shallow Pd/Ge ohmic contacts
    Authors: Jiun-Tsuen Lai
    Ya-Min Lee
    Date: 1994
    Publisher: American Institute of Physics
    Keywords: GALLIUM ARSENIDES
    ALUMINIUM ARSENIDES
    HETEROSTRUCTURES
    FIELD EFFECT TRANSISTORS
    OHMIC CONTACTS
    Abstract: AlGaAs/GaAs charge injection transistor (CHINT)/negative resistance field-effect transistor (NERFET) devices are fabricated with Pd/Ge ohmic contacts. Pd and Ge are deposited by e-beam evaporation. The contact metal layers are annealed by rapid thermal annealing at 450-500°C for 1 min. This gives a shallow ohmic contact and low specific contact resistivity. The better ρc are on the order of 10-6 Ω cm2. Using Pd/Ge contacts and the rapid thermal annealing method, the metallization of CHINT/NERFET becomes much less critical. Good device performance under NERFET mode and CHINT mode is achieved. The largest peak-to-valley ratio of NERFET is about 15 at room temperature. The process developed in this work considerably simplifies the fabrication of CHINT/NERFET devices
    Relation Link: http://www.aip.org/
    URI: http://nthur.lib.nthu.edu.tw/handle/987654321/12126
    Appears in Collections:[Department of Electrical Engineering] EE Journal / Magazine Articles
    [Institute of Electronics Engineering ] ENE Journal / Magazine Articles

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