National Tsing Hua University Institutional Repository:AlGaAs/GaAs charge injection transistor/negative resistance field-effect transistor fabricated with shallow Pd/Ge ohmic contacts
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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 期刊論文 >  AlGaAs/GaAs charge injection transistor/negative resistance field-effect transistor fabricated with shallow Pd/Ge ohmic contacts


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    题名: AlGaAs/GaAs charge injection transistor/negative resistance field-effect transistor fabricated with shallow Pd/Ge ohmic contacts
    作者: Jiun-Tsuen Lai
    Ya-Min Lee
    日期: 1994
    出版者: American Institute of Physics
    关键词: GALLIUM ARSENIDES
    ALUMINIUM ARSENIDES
    HETEROSTRUCTURES
    FIELD EFFECT TRANSISTORS
    OHMIC CONTACTS
    摘要: AlGaAs/GaAs charge injection transistor (CHINT)/negative resistance field-effect transistor (NERFET) devices are fabricated with Pd/Ge ohmic contacts. Pd and Ge are deposited by e-beam evaporation. The contact metal layers are annealed by rapid thermal annealing at 450-500°C for 1 min. This gives a shallow ohmic contact and low specific contact resistivity. The better ρc are on the order of 10-6 Ω cm2. Using Pd/Ge contacts and the rapid thermal annealing method, the metallization of CHINT/NERFET becomes much less critical. Good device performance under NERFET mode and CHINT mode is achieved. The largest peak-to-valley ratio of NERFET is about 15 at room temperature. The process developed in this work considerably simplifies the fabrication of CHINT/NERFET devices
    相関连結: http://www.aip.org/
    URI: http://nthur.lib.nthu.edu.tw/handle/987654321/12126
    显示于类别:[電機工程學系] 期刊論文
    [電子工程研究所] 期刊論文

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