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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 期刊論文 >  The calculation and the photoluminescence characterization of energy levels in a strained GaAs/In0.2Ga0.8As/GaAs quantum well heterostructure for the application of light-emitting real-space transfer devices


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/12128


    Title: The calculation and the photoluminescence characterization of energy levels in a strained GaAs/In0.2Ga0.8As/GaAs quantum well heterostructure for the application of light-emitting real-space transfer devices
    Authors: Yung-Hui Yeh
    Lee, J.Y.-M.
    Date: 1997
    Publisher: American Institute of Physics
    Keywords: gallium arsenide
    indium compounds
    III-V semiconductors
    semiconductor quantum wells
    luminescent devices
    Abstract: Real-space transfer (RST) light-emitting devices are implemented with a strained GaAs/InGaAs/GaAs quantum well heterostructure fabricated on GaAs substrates. The device energy band diagrams are simulated by using the MEDICI program. The effects of critical thickness, quantum size, and strain-induced band-gap shift on the optical transition energies at 77 and 300 K are calculated. Photoluminescence (PL) measurement is carried out to characterize the RST light-emitting devices. The measured results agree well with calculated values. The narrowest full widths at half-maximum of PL spectra are measured to be 17 meV at 300 K and 9 meV at 77 K for an undoped GaAs/In0.2Ga0.8As/GaAs quantum well heterostructure. The PL spectra confirm that the emission is dominated by emission from the strained GaAs/InGaAs/GaAs quantum well
    Relation Link: http://www.aip.org/
    URI: http://nthur.lib.nthu.edu.tw/handle/987654321/12128
    Appears in Collections:[電機工程學系] 期刊論文
    [電子工程研究所] 期刊論文

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