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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 期刊論文 >  The temperature dependence of the conduction current in Ba0.5Sr0.5TiO3 thin-film capacitors for memory device applications


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/12138


    Title: The temperature dependence of the conduction current in Ba0.5Sr0.5TiO3 thin-film capacitors for memory device applications
    Authors: Yung-Bin Lin
    Lee, J.Y.-M.
    Date: 2000
    Publisher: American Institute of Physics
    Keywords: barium compounds
    DRAM chips
    electrical conductivity
    electron traps
    Poole-Frenkel effec
    Abstract: The temperature dependence of the current-voltage characteristics of Ba0.5Sr0.5TiO3 (BST) thin-film capacitors was studied from 300 to 433 K. An Au/BST/Pt/Ti/SiO2/Si structure was used. The BST films were deposited by rf magnetron sputtering. The conduction current was dominated by Schottky emission at room temperature and by Poole-Frenkel emission above 403 K. The dominant conduction mechanism changed from Schottky emission to Poole-Frenkel emission in the temperature range from 373 to 403 K. The BST/Pt and the BST/Au Schottky barrier heights were found to be 0.88 and 0.72 eV, respectively. The trap energy level in BST was 0.83 eV
    Relation Link: http://www.aip.org/
    URI: http://nthur.lib.nthu.edu.tw/handle/987654321/12138
    Appears in Collections:[電機工程學系] 期刊論文
    [電子工程研究所] 期刊論文

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