National Tsing Hua University Institutional Repository:Effect of gate metal on polymer transistor with glass substrate
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    Title: Effect of gate metal on polymer transistor with glass substrate
    Authors: Meng, Hsin-Fei
    Liu, Chien-Cheng
    Jiang, Chin-Jung
    Yeh, Yu-Lin
    Horng, Sheng-Fu
    Hsu, Chain-Shu
    Teacher: 洪勝富
    Date: 2006
    Publisher: American Institute of Physics Inc
    Keywords: Organic polymers
    Field effect transistors
    Dielectric devices
    Indium compounds
    Spin coating
    Abstract: © 2006 American Institute of Physics- Poly(3-hexylthiophene) (P3HT) field-effect transistors (FETs) are fabricated on glass substrates with Si O2 as a gate dielectric over the gate. Indium tin oxide (ITO), Al, and Cr are employed as gate metals. For spin-coated FET, the mobility increases from 10-4 - 10-5 cm2 V s for ITO and Al gates to 10-2 cm2 V s for Cr gate. After O2 plasma treatment, the Si O2 roughness can be made as low as 0.7 nm. The mobility is further improved up to 0.3 cm2 V s by dip-coating P3HT. "Crossed rods" such as morphology can be observed in dip-coated FET with high mobility, indicating high degree of self-assembly facilitated by the flat Si O2 surface over Cr gate. ?2006 American Institute of Physics.
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    Appears in Collections:[Department of Electrical Engineering] EE Journal / Magazine Articles
    [Institute of Electronics Engineering ] ENE Journal / Magazine Articles
    [Institute of Photonics Technologies] IPT Journal / Magazine Articles
    [Center for Nanotechology, Materials Science, and Microsystems ] CNMM Journal / Magazine Articles

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