National Tsing Hua University Institutional Repository:Effect of gate metal on polymer transistor with glass substrate
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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 期刊論文 >  Effect of gate metal on polymer transistor with glass substrate


    题名: Effect of gate metal on polymer transistor with glass substrate
    作者: Meng, Hsin-Fei
    Liu, Chien-Cheng
    Jiang, Chin-Jung
    Yeh, Yu-Lin
    Horng, Sheng-Fu
    Hsu, Chain-Shu
    教師: 洪勝富
    日期: 2006
    出版者: American Institute of Physics Inc
    关键词: Organic polymers
    Field effect transistors
    Dielectric devices
    Indium compounds
    Spin coating
    摘要: © 2006 American Institute of Physics- Poly(3-hexylthiophene) (P3HT) field-effect transistors (FETs) are fabricated on glass substrates with Si O2 as a gate dielectric over the gate. Indium tin oxide (ITO), Al, and Cr are employed as gate metals. For spin-coated FET, the mobility increases from 10-4 - 10-5 cm2 V s for ITO and Al gates to 10-2 cm2 V s for Cr gate. After O2 plasma treatment, the Si O2 roughness can be made as low as 0.7 nm. The mobility is further improved up to 0.3 cm2 V s by dip-coating P3HT. "Crossed rods" such as morphology can be observed in dip-coated FET with high mobility, indicating high degree of self-assembly facilitated by the flat Si O2 surface over Cr gate. ?2006 American Institute of Physics.
    显示于类别:[電機工程學系] 期刊論文
    [電子工程研究所] 期刊論文
    [光電工程研究所] 期刊論文
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